Silicon Doping Teaching Model – P-Type and N-Type Semiconductor Demonstration

This 3D printable educational model demonstrates the basic principle of semiconductor doping using a physical, hands-on approach.

The model consists of a base plate with recesses for individual atom pieces. Silicon atoms are represented by gray tiles with four valence electrons, forming a regular silicon crystal lattice when placed into the grid.

By replacing silicon atoms with boron atoms (red), students can visualize p-type doping. Since boron has only three valence electrons, one bond remains incomplete, creating a "hole" in the crystal structure. This allows students to understand how positive charge carriers are created.

Phosphorus atoms (orange) represent n-type doping. With five valence electrons, phosphorus introduces one additional electron into the silicon lattice. This extra electron can move freely and acts as a negative charge carrier.

The model can also be used to demonstrate how electrons from n-doped regions can fill holes in p-doped regions, helping students understand the basic idea behind semiconductor technology, diodes, and electronic components.

Designed as a classroom demonstration tool for physics, electronics, and vocational education.

The phosphorus atom requires support structures due to its geometry. However, the additional phosphorus electron prints more reliably without supports, as supports may negatively affect the fit and surface quality.

All other atom models can be printed without supports. The parts have sufficient bed adhesion and should print reliably without adding a brim or additional adhesion features.

A multicolor print with a filament change for the atom labels is optional but recommended. This improves visibility and makes the model easier to use in an educational setting.

Ready-to-print files for the Prusa MK4S are included.